The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu- factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac-cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 μA.
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re- quire high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per- formed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The byte programming time is a fast 50 μs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte pro gram cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
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*Single Voltage Operation- 5V Read- 5V Reprogramming*Fast Read Access Time - 45 ns *Internal Program Control and Timer *8K bytes Boot Block With Lockout *Fast Erase Cycle Time - 10 seconds*Byte By Byte Programming - 10 μs/Byte*Hardware Data Protection *DATA Polling For End Of Program Detection *Low Power Dissipation - 30 mA Active Current - 100 μA CMOS Standby Current *Typical 10,000 Write Cycles
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The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu- factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac-cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 μA.
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re- quire high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per- formed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The byte programming time is a fast 50 μs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte pro-gram cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
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